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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SI3129DV-T1-GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.2 W; Minimum DS Breakdown Voltage: 80 V; Maximum Pulsed Drain Current (IDM): 20 A; |
| Datasheet | SI3129DV-T1-GE3 Datasheet |
| In Stock | 21,274 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 46 ns |
| Maximum Drain Current (ID): | 5.4 A |
| Maximum Pulsed Drain Current (IDM): | 20 A |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 4.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 74 ns |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .0827 ohm |
| Avalanche Energy Rating (EAS): | 11 mJ |
| Maximum Feedback Capacitance (Crss): | 10 pF |
| JEDEC-95 Code: | MO-193AA |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 80 V |
