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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SI3552DV-T1-E3 |
| Description | N-CHANNEL AND P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Turn Off Time (toff): 28 ns; |
| Datasheet | SI3552DV-T1-E3 Datasheet |
| In Stock | 33,534 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 25 ns |
| Maximum Drain Current (ID): | 2.5 A |
| Maximum Pulsed Drain Current (IDM): | 8 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 28 ns |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .105 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | MO-193AA |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 2.5 A |
| Peak Reflow Temperature (C): | 260 |
