Vishay Intertechnology - SI3900DV

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SI3900DV by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI3900DV
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
Datasheet SI3900DV Datasheet
In Stock1,243
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .83 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 2 A
Maximum Drain-Source On Resistance: .125 ohm
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