Vishay Intertechnology - SI4214DDY-T1-GE3

SI4214DDY-T1-GE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI4214DDY-T1-GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; No. of Elements: 2; Avalanche Energy Rating (EAS): 5 mJ;
Datasheet SI4214DDY-T1-GE3 Datasheet
In Stock14,092
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 59 ns
Maximum Drain Current (ID): 8.5 A
Maximum Pulsed Drain Current (IDM): 30 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 3.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 108 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0195 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 5 mJ
Maximum Feedback Capacitance (Crss): 86 pF
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 8.5 A
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
14,092 - -

Popular Products

Category Top Products