Vishay Intertechnology - SI4497DY-T1-GE3

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SI4497DY-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI4497DY-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
Datasheet SI4497DY-T1-GE3 Datasheet
In Stock8,973
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 36 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0033 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: SI4497DY-T1-GE3TR
SI4497DYT1GE3
SI4497DY-T1-GE3DKR
SI4497DY-T1-GE3CT
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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