Vishay Intertechnology - SI6968BEDQ-T1-GE3

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SI6968BEDQ-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI6968BEDQ-T1-GE3
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .022 ohm; Moisture Sensitivity Level (MSL): 1;
Datasheet SI6968BEDQ-T1-GE3 Datasheet
In Stock66,156
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5.2 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 5.2 A
Maximum Drain-Source On Resistance: .022 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
66,156 $0.250 $16,539.000

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