Vishay Intertechnology - SI7149ADP-T1-GE3

  1. Home
  2. Vishay Intertechnology - SI7149ADP-T1-GE3
SI7149ADP-T1-GE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7149ADP-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: C BEND; No. of Terminals: 5; Package Style (Meter): SMALL OUTLINE;
Datasheet SI7149ADP-T1-GE3 Datasheet
In Stock62,337
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 31.2 mJ
Other Names: SI7149ADP-T1-GE3TR
SI7149ADP-T1-GE3CT
SI7149ADP-T1-GE3DKR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 300 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-C5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0052 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
62,337 - -

Popular Products

Category Top Products

VNP35N07-E by STMicroelectronics

VNP35N07-E

STMicroelectronics

VNP35N07-E by STMicroelectronics is a 60V N-CHANNEL FET with 35A ID and 0.035 ohm RDS(on). It operates in ENHANCEMENT MODE, with max power dissipation of 40W. Ideal for automotive applications due to AEC-Q101 standard compliance.
ZXMP10A18GTA by Zetex Plc

ZXMP10A18GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IRLML0030TRPBF by Infineon Technologies

IRLML0030TRPBF

Infineon Technologies

Infineon's IRLML0030TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.3A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 1.3W Power Dissipation, and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
CSD18540Q5B by Texas Instruments

CSD18540Q5B

Texas Instruments

CSD18540Q5B by Texas Instruments is an N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0033 ohm Drain-Source On Resistance. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 175 °C.
IRFR9024NTRPBF by Infineon Technologies

IRFR9024NTRPBF

Infineon Technologies

IRFR9024NTRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 44A and EAS of 62mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in a small outline design.
IRFZ44NSTRLPBF by Infineon Technologies

IRFZ44NSTRLPBF

Infineon Technologies

IRFZ44NSTRLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). With a max power dissipation of 94W and operating temp of 175°C, it's suitable for high-power circuits requiring fast switching capabilities.
IRFP250NPBF by International Rectifier

IRFP250NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 30 A; No. of Terminals: 3;
IRFP460BPBF by Vishay Intertechnology

IRFP460BPBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.
IRLML9303TRPBF by International Rectifier

IRLML9303TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
PMV20ENR by Nexperia

PMV20ENR

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Transistor Element Material: SILICON; Terminal Form: GULL WING;
IRFR120NTRPBF by International Rectifier

IRFR120NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Position: SINGLE; Maximum Time At Peak Reflow Temperature (s): 30;
IRLL110TRPBF by International Rectifier

IRLL110TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
IRF7304TRPBF by Infineon Technologies

IRF7304TRPBF

Infineon Technologies

IRF7304TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A ID. It features a built-in diode, 0.09 ohm RDS(on), and operates in enhancement mode. Ideal for power management applications requiring high drain current capabilities in compact designs.
2N7002PV,115 by NXP Semiconductors

2N7002PV,115

NXP Semiconductors

2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
CSD19536KTT by Texas Instruments

CSD19536KTT

Texas Instruments

CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
IRF7416TRPBF by Infineon Technologies

IRF7416TRPBF

Infineon Technologies

IRF7416TRPBF by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max pulsed drain current of 45A.
FQD1N80TM by Onsemi

FQD1N80TM

Onsemi

FQD1N80TM by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 4A and EAS of 90mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 150°C.
IPT007N06NATMA1 by Infineon Technologies

IPT007N06NATMA1

Infineon Technologies

IPT007N06NATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 1944A IDM, and 0.00075 ohm RDS(ON). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
IRF640 by STMicroelectronics

IRF640

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
IRLML2060TRPBF by International Rectifier

IRLML2060TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;