Vishay Intertechnology - SI7252DP-T1-GE3

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SI7252DP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7252DP-T1-GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 36.7 A; Maximum Pulsed Drain Current (IDM): 80 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SI7252DP-T1-GE3 Datasheet
In Stock12,346
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 36.7 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-C6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .017 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 20 mJ
Other Names: SI7252DP-T1-GE3DKR
SI7252DP-T1-GE3TR
SI7252DPT1GE3
SI7252DP-T1-GE3CT
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Peak Reflow Temperature (C): 260
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