Vishay Intertechnology - SI7850DP-T1

SI7850DP-T1 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7850DP-T1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
Datasheet SI7850DP-T1 Datasheet
In Stock719
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.2 A
Maximum Pulsed Drain Current (IDM): 40 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .022 ohm
Avalanche Energy Rating (EAS): 11 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: FAST SWITCHING
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