Vishay Intertechnology - SI8425DB-T1-E1

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SI8425DB-T1-E1 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI8425DB-T1-E1
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Drain Current (ID): 9.3 A; Moisture Sensitivity Level (MSL): 1;
Datasheet SI8425DB-T1-E1 Datasheet
In Stock5,849
NAME DESCRIPTION
Other Names: SI8425DB-T1-E1CT
SI8425DB-T1-E1DKR
SI8425DB-T1-E1TR
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9.3 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 2.7 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 9.3 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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