Vishay Intertechnology - SI8489EDB-T2-E1

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SI8489EDB-T2-E1 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI8489EDB-T2-E1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
Datasheet SI8489EDB-T2-E1 Datasheet
In Stock5,662
NAME DESCRIPTION
Other Names: SI8489EDB-T2-E1CT
SI8489EDB-T2-E1TR
SI8489EDB-T2-E1DKR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 20 V
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: S-PBGA-B4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .054 ohm
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