Vishay Intertechnology - SI8800EDB-T2-E1

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SI8800EDB-T2-E1 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI8800EDB-T2-E1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Drain Current (ID): 2 A; Moisture Sensitivity Level (MSL): 1;
Datasheet SI8800EDB-T2-E1 Datasheet
In Stock11,071
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 4
Maximum Power Dissipation (Abs): .9 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: S-PBGA-B4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .105 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: SI8800EDB-T2-E1CT
SI8800EDB-T2-E1DKR
SI8800EDB-T2-E1TR
SI8800EDBT2E1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.8 A
Peak Reflow Temperature (C): 260
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