Image shown is a representation only.
| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SIA432DJ-T1-GE3 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; No. of Elements: 1; JESD-609 Code: e3; |
| Datasheet | SIA432DJ-T1-GE3 Datasheet |
| In Stock | 5,457 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 12 A |
| Sub-Category: | FET General Purpose Powers |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 19.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-C3 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | C BEND |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 12 A |
| Peak Reflow Temperature (C): | 260 |
