Vishay Intertechnology - SIA440DJ-T1-GE3

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SIA440DJ-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIA440DJ-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Shape: SQUARE;
Datasheet SIA440DJ-T1-GE3 Datasheet
In Stock53,497
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 6 mJ
Other Names: SIA440DJ-T1-GE3TR
SIA440DJ-T1-GE3DKR
SIA440DJ-T1-GE3CT
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 50 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .026 ohm
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