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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SIA456DJ-T1-GE3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 1.38 ohm; |
| Datasheet | SIA456DJ-T1-GE3 Datasheet |
| In Stock | 28,557 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 55 ns |
| Maximum Drain Current (ID): | 2.6 A |
| Maximum Pulsed Drain Current (IDM): | 2 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 19 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 75 ns |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 1.38 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
SIA456DJ-T1-GE3DKR SIA456DJT1GE3 SIA456DJ-T1-GE3CT SIA456DJ-T1-GE3TR |
| Maximum Feedback Capacitance (Crss): | 6 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 2.6 A |
