SIA910EDJ-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIA910EDJ-T1-GE3
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7.8 W; Maximum Drain Current (Abs) (ID): 4.5 A; Peak Reflow Temperature (C): 260;
Datasheet	SIA910EDJ-T1-GE3 Datasheet
In Stock	42,933

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.5 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	7.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.028 ohm
Other Names:	SIA910EDJ-T1-GE3DKR SIA910EDJ-T1-GE3CT SIA910EDJ-T1-GE3TR SIA910EDJT1GE3
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	12 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	4.5 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
42,933	-	-

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