SIHB23N60E-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIHB23N60E-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
Datasheet	SIHB23N60E-GE3 Datasheet
In Stock	384

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	353 mJ
Other Names:	SIHB23N60E-GE3DKR SIHB23N60E-GE3TRINACTIVE SIHB23N60E-GE3TR-ND SIHB23N60E-GE3DKRINACTIVE SIHB23N60E-GE3CT-ND SIHB23N60E-GE3CT SIHB23N60E-GE3TR SIHB23N60E-GE3DKR-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	23 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	63 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.158 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
384	-	-

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