Vishay Intertechnology - SIHD7N60E-GE3

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SIHD7N60E-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIHD7N60E-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 609 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: SINGLE;
Datasheet SIHD7N60E-GE3 Datasheet
In Stock37,873
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 43 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7 A
JEDEC-95 Code: TO-252AA
Maximum Pulsed Drain Current (IDM): 18 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 609 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .6 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
37,873 $0.211 $7,991.203

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