SIR170DP-T1-RE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIR170DP-T1-RE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet	SIR170DP-T1-RE3 Datasheet
In Stock	80,384

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	38 ns
Maximum Drain Current (ID):	95 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	104 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	102 ns
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0048 ohm
Avalanche Energy Rating (EAS):	61.2 mJ
Maximum Feedback Capacitance (Crss):	20 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Maximum Drain Current (Abs) (ID):	95 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
80,384	$0.729	$58,599.936

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