Vishay Intertechnology - SIR422DP-T1-GE3

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SIR422DP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIR422DP-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34.7 W; JESD-30 Code: R-XDSO-C5; Qualification: Not Qualified;
Datasheet SIR422DP-T1-GE3 Datasheet
In Stock37,158
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20.5 A
Maximum Pulsed Drain Current (IDM): 70 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 5
Maximum Power Dissipation (Abs): 34.7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0066 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 45 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 40 A
Peak Reflow Temperature (C): 260
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