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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SIR626LDP-T1-RE3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Drain Current (Abs) (ID): 186 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | SIR626LDP-T1-RE3 Datasheet |
| In Stock | 6,437 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 162 ns |
| Maximum Drain Current (ID): | 186 A |
| Maximum Pulsed Drain Current (IDM): | 400 A |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 104 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 110 ns |
| JESD-30 Code: | R-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0021 ohm |
| Avalanche Energy Rating (EAS): | 125 mJ |
| Other Names: |
SIR626LDP-T1-RE3CT SIR626LDP-T1-RE3TR SIR626LDP-T1-RE3DKR |
| Maximum Feedback Capacitance (Crss): | 60 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Drain Current (Abs) (ID): | 186 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
