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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SIR871DP-T1-GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | SIR871DP-T1-GE3 Datasheet |
| In Stock | 6,952 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 48 A |
| Maximum Pulsed Drain Current (IDM): | 300 A |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .02 ohm |
| Avalanche Energy Rating (EAS): | 61 mJ |
| Other Names: |
SIR871DP-T1-GE3-ND SIR871DP-T1-GE3TR SIR871DP-T1-GE3DKR SIR871DP-T1-GE3CT |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Peak Reflow Temperature (C): | 260 |
