
Image shown is a representation only.
Manufacturer | Vishay Intertechnology |
---|---|
Manufacturer's Part Number | SIR871DP-T1-GE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; |
Datasheet | SIR871DP-T1-GE3 Datasheet |
In Stock | 6,952 |
NAME | DESCRIPTION |
---|---|
Avalanche Energy Rating (EAS): | 61 mJ |
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 48 A |
Maximum Pulsed Drain Current (IDM): | 300 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 5 |
Minimum DS Breakdown Voltage: | 100 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .02 ohm |