Vishay Intertechnology - SIRA14DP-T1-GE3

SIRA14DP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIRA14DP-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
Datasheet SIRA14DP-T1-GE3 Datasheet
In Stock23,545
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 58 A
Maximum Pulsed Drain Current (IDM): 130 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 31.2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0051 ohm
Avalanche Energy Rating (EAS): 11.25 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 20 A
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Pricing (USD)

Qty. Unit Price Ext. Price
23,545 $0.213 $5,015.085

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