Vishay Intertechnology - SIRA80DP-T1-RE3

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SIRA80DP-T1-RE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIRA80DP-T1-RE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Turn On Time (ton): 85 ns; Maximum Drain Current (ID): 335 A;
Datasheet SIRA80DP-T1-RE3 Datasheet
In Stock29,130
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 85 ns
Maximum Drain Current (ID): 335 A
Maximum Pulsed Drain Current (IDM): 500 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 104 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 105 ns
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00062 ohm
Avalanche Energy Rating (EAS): 101 mJ
Maximum Feedback Capacitance (Crss): 626 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 100 A
Peak Reflow Temperature (C): NOT SPECIFIED
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