Vishay Intertechnology - SIS443DN-T1-GE3

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SIS443DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIS443DN-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
Datasheet SIS443DN-T1-GE3 Datasheet
In Stock24,683
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .035 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-C5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0117 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: SIS443DN-T1-GE3DKR
SIS443DN-T1-GE3CT
SIS443DN-T1-GE3TR
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Peak Reflow Temperature (C): 260
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