Vishay Intertechnology - SIS862DN-T1-GE3

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SIS862DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIS862DN-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Pulsed Drain Current (IDM): 100 A; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet SIS862DN-T1-GE3 Datasheet
In Stock9,433
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0085 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 11.25 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): 260
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