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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SIS892ADN-T1-GE3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .033 ohm; |
| Datasheet | SIS892ADN-T1-GE3 Datasheet |
| In Stock | 25,826 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 28 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 52 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-C5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | C BEND |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .033 ohm |
| Avalanche Energy Rating (EAS): | 5 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Maximum Drain Current (Abs) (ID): | 28 A |
