Vishay Intertechnology - SIS903DN-T1-GE3

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SIS903DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIS903DN-T1-GE3
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Terminal Form: FLAT; JESD-30 Code: S-PDSO-F8;
Datasheet SIS903DN-T1-GE3 Datasheet
In Stock7,982
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 70 ns
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 40 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 23 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 330 ns
JESD-30 Code: S-PDSO-F8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0201 ohm
Avalanche Energy Rating (EAS): 9.8 mJ
Other Names: SIS903DN-T1-GE3TR
SIS903DN-GE3
SIS903DN-T1-GE3CT
SIS903DN-T1-GE3DKR
Maximum Feedback Capacitance (Crss): 240 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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