SIS990DN-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIS990DN-T1-GE3
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Avalanche Energy Rating (EAS): 2.5 mJ; Package Body Material: PLASTIC/EPOXY;
Datasheet	SIS990DN-T1-GE3 Datasheet
In Stock	13,462

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12.1 A
Maximum Pulsed Drain Current (IDM):	20 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-C6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.085 ohm
Avalanche Energy Rating (EAS):	2.5 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Maximum Drain Current (Abs) (ID):	12.1 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
13,462	-	-

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