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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SISS27ADN-T1-GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Peak Reflow Temperature (C): NOT SPECIFIED; Avalanche Energy Rating (EAS): 31 mJ; |
| Datasheet | SISS27ADN-T1-GE3 Datasheet |
| In Stock | 24,518 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 45 ns |
| Maximum Drain Current (ID): | 50 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 57 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 102 ns |
| JESD-30 Code: | S-PDSO-N5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0051 ohm |
| Avalanche Energy Rating (EAS): | 31 mJ |
| Other Names: |
SISS27ADN-T1-GE3TR SISS27ADN-T1-GE3DKR SISS27ADN-T1-GE3CT |
| Maximum Feedback Capacitance (Crss): | 440 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Drain Current (Abs) (ID): | 50 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
