Image shown is a representation only.
| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SM8S30A-E3/2D |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: SINGLE; Terminal Form: C BEND; No. of Terminals: 1; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | SM8S30A-E3/2D Datasheet |
| In Stock | 1,500 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 1 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Non Repetitive Peak Reverse Power Dissipation: | 5200 W |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PSSO-C1 |
| Minimum Breakdown Voltage: | 33.3 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | C BEND |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ANODE |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 36.8 V |
| Maximum Repetitive Peak Reverse Voltage: | 30 V |
| JEDEC-95 Code: | DO-218AB |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | 8 W |
| Additional Features: | LOW LEAKAGE CURRENT |
