Vishay Intertechnology - SQ1431EH-T1_GE3

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SQ1431EH-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ1431EH-T1_GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): .8 A;
Datasheet SQ1431EH-T1_GE3 Datasheet
In Stock47,884
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 12 pF
Maximum Drain Current (ID): .8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .28 ohm
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