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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQ2319ES-T1-GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G3; |
| Datasheet | SQ2319ES-T1-GE3 Datasheet |
| In Stock | 1,148 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.3 A |
| Maximum Pulsed Drain Current (IDM): | 30 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .082 ohm |
| Avalanche Energy Rating (EAS): | 1.8 mJ |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 3.3 A |
| Peak Reflow Temperature (C): | 260 |
