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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQ2361ES-T1_GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .177 ohm; Maximum Feedback Capacitance (Crss): 42 pF; Terminal Position: DUAL; |
| Datasheet | SQ2361ES-T1_GE3 Datasheet |
| In Stock | 76,289 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 23 ns |
| Maximum Drain Current (ID): | 2.8 A |
| Maximum Pulsed Drain Current (IDM): | 11 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 32 ns |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .177 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 7.8 mJ |
| Other Names: |
SQ2361ES-T1_GE3DKR SQ2361ES-T1_GE3CT SQ2361ES-T1-GE3 SQ2361ES-T1_GE3TR SQ2361ES-T1_GE3-ND |
| Maximum Feedback Capacitance (Crss): | 42 pF |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
