Vishay Intertechnology - SQ3427EV-T1_GE3

SQ3427EV-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ3427EV-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): 80 pF; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet SQ3427EV-T1_GE3 Datasheet
In Stock65,126
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 80 pF
Maximum Drain Current (ID): 5.3 A
JEDEC-95 Code: MO-193AA
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .095 ohm
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