Vishay Intertechnology - SQ3461EV-T1_GE3

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SQ3461EV-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ3461EV-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Maximum Pulsed Drain Current (IDM): 30 A; Maximum Turn On Time (ton): 85 ns;
Datasheet SQ3461EV-T1_GE3 Datasheet
In Stock9,706
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 85 ns
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 30 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 213 ns
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .025 ohm
Avalanche Energy Rating (EAS): 14 mJ
Maximum Feedback Capacitance (Crss): 620 pF
JEDEC-95 Code: MO-193AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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