SQ4532AEY-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ4532AEY-T1_GE3
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MS-012AA; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
Datasheet	SQ4532AEY-T1_GE3 Datasheet
In Stock	10,173

NAME	DESCRIPTION
Other Names:	SQ4532AEY-T1_GE3CT SQ4532AEY-T1_GE3-ND SQ4532AEY-T1_GE3TR SQ4532AEY-T1_GE3DKR
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	53 pF
Maximum Drain Current (ID):	7.3 A
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.031 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,173	-	-

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