Vishay Intertechnology - SQ4949EY-T1_GE3

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SQ4949EY-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ4949EY-T1_GE3
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 7.5 A; Maximum Drain-Source On Resistance: .035 ohm;
Datasheet SQ4949EY-T1_GE3 Datasheet
In Stock39,442
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 145 pF
Maximum Drain Current (ID): 7.5 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .035 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
39,442 $1.550 $61,135.100

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