Vishay Intertechnology - SQ7415AEN-T1_GE3

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SQ7415AEN-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ7415AEN-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 64 A; JESD-30 Code: S-XDSO-C5; Transistor Element Material: SILICON;
Datasheet SQ7415AEN-T1_GE3 Datasheet
In Stock4,149
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 26 mJ
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 64 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .065 ohm
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