Vishay Intertechnology - SQD40061EL_GE3

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SQD40061EL_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQD40061EL_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 40 V; JESD-30 Code: R-PSSO-G2;
Datasheet SQD40061EL_GE3 Datasheet
In Stock12,573
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 305 ns
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 300 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 470 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0051 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 84 mJ
Maximum Feedback Capacitance (Crss): 1000 pF
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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