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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQJ211ELP-T1_GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Maximum Pulsed Drain Current (IDM): 100 A; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | SQJ211ELP-T1_GE3 Datasheet |
| In Stock | 5,123 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 35 ns |
| Maximum Drain Current (ID): | 33.6 A |
| Maximum Pulsed Drain Current (IDM): | 100 A |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 80 ns |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .03 ohm |
| Avalanche Energy Rating (EAS): | 88 mJ |
| Other Names: |
742-SQJ211ELP-T1_GE3CT 742-SQJ211ELP-T1_GE3TR |
| Maximum Feedback Capacitance (Crss): | 80 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Reference Standard: | AEC-Q101 |
