SQJ211ELP-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQJ211ELP-T1_GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Maximum Pulsed Drain Current (IDM): 100 A; Package Style (Meter): SMALL OUTLINE;
Datasheet	SQJ211ELP-T1_GE3 Datasheet
In Stock	5,123

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	35 ns
Maximum Drain Current (ID):	33.6 A
Maximum Pulsed Drain Current (IDM):	100 A
Surface Mount:	YES
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	80 ns
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.03 ohm
Avalanche Energy Rating (EAS):	88 mJ
Maximum Feedback Capacitance (Crss):	80 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,123	-	-

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