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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQJ407EP-T1_GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; No. of Terminals: 4; |
| Datasheet | SQJ407EP-T1_GE3 Datasheet |
| In Stock | 38,409 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 84 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 60 A |
| Maximum Pulsed Drain Current (IDM): | 155 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 30 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Reference Standard: | AEC-Q101 |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .0044 ohm |
