Vishay Intertechnology - SQJ970EP-T1-GE3

SQJ970EP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJ970EP-T1-GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .02 ohm; JESD-30 Code: R-PSSO-G4;
Datasheet SQJ970EP-T1-GE3 Datasheet
In Stock678
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .0064 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .02 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 6.4 A
Peak Reflow Temperature (C): 260
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