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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJ970EP-T1-GE3 |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .02 ohm; JESD-30 Code: R-PSSO-G4; |
Datasheet | SQJ970EP-T1-GE3 Datasheet |
In Stock | 678 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | .0064 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 1.4 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .02 ohm |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 40 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 6.4 A |
Peak Reflow Temperature (C): | 260 |