Vishay Intertechnology - SQJA86EP-T1_GE3

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SQJA86EP-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJA86EP-T1_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel; Reference Standard: AEC-Q101;
Datasheet SQJA86EP-T1_GE3 Datasheet
In Stock8,709
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 84 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .019 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 20 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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