Vishay Intertechnology - SQJB00EP-T1_GE3

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SQJB00EP-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJB00EP-T1_GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; JESD-30 Code: R-PSSO-G4;
Datasheet SQJB00EP-T1_GE3 Datasheet
In Stock36,237
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 26.5 mJ
Other Names: SQJB00EP-T1_GE3TR
SQJB00EP-T1_GE3DKR
SQJB00EP-T1_GE3CT
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 84 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .013 ohm
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