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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJB80EP-T1_GE3 |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .019 ohm; Maximum Operating Temperature: 175 Cel; |
Datasheet | SQJB80EP-T1_GE3 Datasheet |
In Stock | 9,009 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 20 A |
Maximum Pulsed Drain Current (IDM): | 84 A |
Surface Mount: | YES |
No. of Terminals: | 4 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .019 ohm |
Avalanche Energy Rating (EAS): | 20 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 80 V |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | 260 |