Vishay Intertechnology - SQM50020EL_GE3

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SQM50020EL_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQM50020EL_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
Datasheet SQM50020EL_GE3 Datasheet
In Stock97,949
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 281 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 120 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 300 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .002 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
97,949 $2.112 $206,868.288

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