SQS401EN-T1-BE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQS401EN-T1-BE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 205 pF; Transistor Element Material: SILICON; Terminal Position: DUAL;
Datasheet	SQS401EN-T1-BE3 Datasheet
In Stock	115,694

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	27 ns
Maximum Drain Current (ID):	16 A
Maximum Pulsed Drain Current (IDM):	64 A
Surface Mount:	YES
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	57 ns
JESD-30 Code:	S-PDSO-F8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.029 ohm
Avalanche Energy Rating (EAS):	33.8 mJ
Maximum Feedback Capacitance (Crss):	205 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Peak Reflow Temperature (C):	245

Pricing (USD)

Qty.	Unit Price	Ext. Price
115,694	-	-

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