SQS462EN-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQS462EN-T1_GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; Terminal Position: DUAL;
Datasheet	SQS462EN-T1_GE3 Datasheet
In Stock	47,666

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	4 mJ
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-XDSO-C5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Peak Reflow Temperature (C):	240
Maximum Drain-Source On Resistance:	.063 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
47,666	$0.334	$15,920.444

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