SQS481ENW-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQS481ENW-T1_GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): .8 mJ; Maximum Drain-Source On Resistance: 1.095 ohm; Transistor Element Material: SILICON;
Datasheet	SQS481ENW-T1_GE3 Datasheet
In Stock	21,533

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	13.3 ns
Maximum Drain Current (ID):	4.7 A
Maximum Pulsed Drain Current (IDM):	19 A
Surface Mount:	YES
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	25.3 ns
JESD-30 Code:	S-PDSO-F8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.095 ohm
Avalanche Energy Rating (EAS):	.8 mJ
Maximum Feedback Capacitance (Crss):	13 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	150 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
21,533	-	-

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